Silicon Ingot Annealing Furnace from Japan
Furnace for controlled heat treatment to anneal silicon ingots post-crystal growth, relieving stresses for wafer slicing. Classified under HTS 8417.10.00.00 for metal heat treatment in semiconductor processing.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%
Import Tips
• Reference statistical notes for semiconductor material processing confirmation
• Include annealing temperature profiles (800-1200°C) in documentation
• Ensure not declared as testing equipment to avoid Chapter 90