Silicon Ingot Annealing Furnace from China
Furnace for controlled heat treatment to anneal silicon ingots post-crystal growth, relieving stresses for wafer slicing. Classified under HTS 8417.10.00.00 for metal heat treatment in semiconductor processing.
Duty Rate — China → United States
37.9%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
Import Tips
• Reference statistical notes for semiconductor material processing confirmation
• Include annealing temperature profiles (800-1200°C) in documentation
• Ensure not declared as testing equipment to avoid Chapter 90