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Czochralski Crystal Puller Furnace from China

A high-temperature furnace using the Czochralski method to grow monocrystalline silicon boules from molten semiconductor material for wafer production. It falls under HTS 8417.10.00.00 as it is designed for the melting and controlled heat treatment of metals like silicon in semiconductor manufacturing.

Duty Rate — China → United States

37.9%

Rate breakdown

9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]

Import Tips

Verify furnace specifications confirm use for metal melting like silicon, not electric heating to avoid Chapter 85 misclassification

Provide detailed technical documentation on temperature capabilities and material compatibility for customs valuation

Ensure compliance with semiconductor equipment statistical notes; declare as non-electric industrial furnace