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Ion Implanter Turbine Drive from Japan

High-precision gas turbine powering end-station rotation in ion implanters for semiconductor wafer doping. Under 8411.99.9085 for non-aircraft gas turbine parts in semiconductor device processing.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%

Import Tips

Document dose uniformity specifications; include high-voltage safety certifications; verify radioactive source exemptions if applicable

Ion Implanter Turbine Drive from Japan — Import Duty Rate | HTS 8411.99.90.85