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Gallium Arsenide Vapor Turbine Rotor for LED Production from China

Finished rotor for molecular beam epitaxy (MBE) vapor turbines processing gallium arsenide wafers for LED manufacturing. High-precision balancing for ultra-high vacuum conditions. HTS 8406.90.5000 applies to such specialized semiconductor turbine rotors.

Duty Rate — China → United States

35%

Rate breakdown

9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)

Import Tips

Provide epitaxial layer growth specifications to link to statistical note (a)(i)

Ensure export control compliance (EAR/ITAR) for compound semiconductor equipment

Document UHV compatibility to distinguish from standard industrial rotors