Float Zone Crystal Grower Turbine from Japan
Vapor turbine powering float zone furnaces for high-purity silicon crystal growth in semiconductor production. Falls under HTS 8406.82.90.00 for other turbines ≤40 MW output, distinct from power generation applications. Essential for precise RF heating and zone melting processes.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Provide evidence of use in float zone method to distinguish from general steam turbines
• Label components clearly to prevent misclassification under broader turbine headings
• Check for dual-use export controls on semiconductor equipment