Recycled Gallium Scrap from GaN Chip Fabrication from Japan
Gallium scrap from gallium nitride (GaN) power electronics fabrication, unwrought form with 85-95% recovery yield. HTS 8112.92.10.00 for waste and scrap of gallium. Supports circular economy in RF and LED sectors.
Duty Rate — Japan → United States
3%
Rate breakdown
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Provide recycling chain documentation (origin to scrap) for traceability under Basel Convention
• Test for nitride residues—high levels may require hazardous waste permits
• Value based on recoverable gallium content, not scrap weight, to avoid disputes