Recycled Gallium Scrap from GaN Chip Fabrication from China
Gallium scrap from gallium nitride (GaN) power electronics fabrication, unwrought form with 85-95% recovery yield. HTS 8112.92.10.00 for waste and scrap of gallium. Supports circular economy in RF and LED sectors.
Duty Rate — China → United States
28%
Rate breakdown
9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Provide recycling chain documentation (origin to scrap) for traceability under Basel Convention
• Test for nitride residues—high levels may require hazardous waste permits
• Value based on recoverable gallium content, not scrap weight, to avoid disputes