High-Purity Gallium for Semiconductor Doping from Mexico
Zone-refined unwrought gallium (7N purity) supplied as shots or lumps for n-type doping in silicon wafers. Under HTS 8112.92.10.00 as unwrought, not as finished dopants or compounds. Critical for photovoltaic and chip production.
Duty Rate — Mexico → United States
3%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Include zone-refining certificates showing 99.99999% purity to support high-tech end-use claims
• Declare intended use as doping material for potential duty reductions under GSP or FTAs
• Prevent misclassification as GaAs precursor—pure metal stays in 8112, compounds in 28