High-Purity Gallium for Semiconductor Doping from China
Zone-refined unwrought gallium (7N purity) supplied as shots or lumps for n-type doping in silicon wafers. Under HTS 8112.92.10.00 as unwrought, not as finished dopants or compounds. Critical for photovoltaic and chip production.
Duty Rate — China → United States
28%
Rate breakdown
9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Include zone-refining certificates showing 99.99999% purity to support high-tech end-use claims
• Declare intended use as doping material for potential duty reductions under GSP or FTAs
• Prevent misclassification as GaAs precursor—pure metal stays in 8112, compounds in 28