Quartz LPCVD Reactor Tube from China

Specialized fused quartz tube for Low Pressure Chemical Vapor Deposition (LPCVD) reactors in semiconductor thin film deposition. Maintains vacuum integrity at elevated temperatures. Classifies under HTS 7020.00.30.00 for diffusion/oxidation furnace insertion.

Duty Rate — China → United States

35%

Rate breakdown

9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)

Import Tips

Document vacuum flange compatibility (KF/VCR) proving reactor tube function

Specify deposition precursors (TEOS, silane) for process validation

Avoid 'general furnace tube' declarations; emphasize semiconductor specificity