HFC-23 Semiconductor Etch Gas Blend from Japan
Plasma etch gas mixture with HFC-23 for microchip fabrication processes requiring high-purity fluorinated gases. Falls under HTS 3827.51.00.00 because it contains trifluoromethane without CFCs or HCFCs, critical for advanced semiconductor manufacturing.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• 99.999% purity certificates required for semiconductor-grade gases
• DOT hazardous material shipping papers mandatory for compressed gases
• Particle count and moisture content specs needed for cleanroom validation