HFC-23 Semiconductor Etch Gas Blend from China
Plasma etch gas mixture with HFC-23 for microchip fabrication processes requiring high-purity fluorinated gases. Falls under HTS 3827.51.00.00 because it contains trifluoromethane without CFCs or HCFCs, critical for advanced semiconductor manufacturing.
Duty Rate — China → United States
41.2%
Rate breakdown
9903.05.3112.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of China, as provided for in U.S. note 52 to this subchapter
9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)
Import Tips
• 99.999% purity certificates required for semiconductor-grade gases
• DOT hazardous material shipping papers mandatory for compressed gases
• Particle count and moisture content specs needed for cleanroom validation