Molybdenum Niobate High-K Dielectric from Japan
An inorganic precursor mixture of molybdenum and niobium compounds for thin-film high-k dielectrics in semiconductor manufacturing. Enables smaller transistor dimensions. Covered by HTS 3824.99.34.00 as molybdenum inorganic preparation.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Cleanroom packaging certification required for semiconductor chemicals
• ITAR restrictions possible for advanced semiconductor materials
• Vapor pressure data essential for safe transport classification