Molybdenum Niobate High-K Dielectric from China
An inorganic precursor mixture of molybdenum and niobium compounds for thin-film high-k dielectrics in semiconductor manufacturing. Enables smaller transistor dimensions. Covered by HTS 3824.99.34.00 as molybdenum inorganic preparation.
Duty Rate — China → United States
37.8%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)
Import Tips
• Cleanroom packaging certification required for semiconductor chemicals
• ITAR restrictions possible for advanced semiconductor materials
• Vapor pressure data essential for safe transport classification