8-inch 4H N-Epi Ready Doped SiC Wafer from Germany
8-inch 4H-SiC wafer nitrogen-doped and epi-ready for immediate epitaxial growth in SiC power device production. Classified in HTS 3818.00.00.30 for its doping tailored to electronics wafers. Supports manufacturing of 1200V+ power modules for renewables.
Duty Rate — Germany → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Submit epi-ready certification (TTV <1µm); non-compliant wafers risk downgrade to 2849
• Declare bow/warp measurements; exceedances trigger quality-based duty adjustments
• For large diameters, verify container ESD controls to avoid damage during ocean freight