3818.00.00.30/8-inch 4H N-Epi Ready Doped SiC Wafer/Canada

8-inch 4H N-Epi Ready Doped SiC Wafer from Canada

8-inch 4H-SiC wafer nitrogen-doped and epi-ready for immediate epitaxial growth in SiC power device production. Classified in HTS 3818.00.00.30 for its doping tailored to electronics wafers. Supports manufacturing of 1200V+ power modules for renewables.

Duty Rate — Canada → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Submit epi-ready certification (TTV <1µm); non-compliant wafers risk downgrade to 2849

• Declare bow/warp measurements; exceedances trigger quality-based duty adjustments

• For large diameters, verify container ESD controls to avoid damage during ocean freight