3818.00.00.30/6-inch 4H-SiC P-type Doped Wafer/Japan

6-inch 4H-SiC P-type Doped Wafer from Japan

A 6-inch 4H polytype silicon carbide wafer doped with aluminum for P-type properties, essential for MOSFET production in electric vehicles. Classified under HTS 3818.00.00.30 due to its doping for electronic applications in wafer form. High purity and low defect density support advanced power semiconductor fabrication.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Provide X-ray diffraction (XRD) reports confirming 4H polytype; mismatches cause classification disputes

• Label with precise micropipe density (<1/cm² for prime grade) to meet electronics import standards

• Watch for anti-dumping duties on certain Asian origins; declare substrate polish level accurately

6-inch 4H-SiC P-type Doped Wafer from Japan — Import Duty Rate | HTS 3818.00.00.30