3818.00.00.30/6-inch 4H-SiC P-type Doped Wafer/China

6-inch 4H-SiC P-type Doped Wafer from China

A 6-inch 4H polytype silicon carbide wafer doped with aluminum for P-type properties, essential for MOSFET production in electric vehicles. Classified under HTS 3818.00.00.30 due to its doping for electronic applications in wafer form. High purity and low defect density support advanced power semiconductor fabrication.

Duty Rate — China → United States

50%

Rate breakdown

9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter

9903.05.860%Universal product exemption (U.S. note 52(b))

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Import Tips

• Provide X-ray diffraction (XRD) reports confirming 4H polytype; mismatches cause classification disputes

• Label with precise micropipe density (<1/cm² for prime grade) to meet electronics import standards

• Watch for anti-dumping duties on certain Asian origins; declare substrate polish level accurately