3-inch High-Purity N-Doped SiC Wafer from Germany
Compact 3-inch nitrogen-doped silicon carbide wafer with ultra-low defect counts for research and prototyping in power electronics. Falls under HTS 3818.00.00.30 as doped SiC in disc form for electronic use. Ideal for universities and R&D in high-voltage switches.
Duty Rate — Germany → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Require vendor resistivity mapping data; uniform doping prevents customs valuation disputes
• Use ESD-safe packaging documentation to comply with electronics import handling rules
• Avoid classifying as 'parts' if sold standalone; specify wafer-only to stay in 3818