3818.00.00.30/3-inch High-Purity N-Doped SiC Wafer/Germany

3-inch High-Purity N-Doped SiC Wafer from Germany

Compact 3-inch nitrogen-doped silicon carbide wafer with ultra-low defect counts for research and prototyping in power electronics. Falls under HTS 3818.00.00.30 as doped SiC in disc form for electronic use. Ideal for universities and R&D in high-voltage switches.

Duty Rate — Germany → United States

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter

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Import Tips

• Require vendor resistivity mapping data; uniform doping prevents customs valuation disputes

• Use ESD-safe packaging documentation to comply with electronics import handling rules

• Avoid classifying as 'parts' if sold standalone; specify wafer-only to stay in 3818