3-inch High-Purity N-Doped SiC Wafer from China
Compact 3-inch nitrogen-doped silicon carbide wafer with ultra-low defect counts for research and prototyping in power electronics. Falls under HTS 3818.00.00.30 as doped SiC in disc form for electronic use. Ideal for universities and R&D in high-voltage switches.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Require vendor resistivity mapping data; uniform doping prevents customs valuation disputes
• Use ESD-safe packaging documentation to comply with electronics import handling rules
• Avoid classifying as 'parts' if sold standalone; specify wafer-only to stay in 3818