200mm Production-Grade N-Doped SiC Wafer from Mexico
Large 200mm nitrogen-doped SiC wafer for high-volume power semiconductor production. HTS 3818.00.00.30 for doped SiC discs in electronics. Enables scaling of EV inverters and solar optimizers.
Duty Rate — Mexico → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Prime grade (A/B) designation required; production rejects may fall to 2849
• Volume shipments need humidity-controlled bills for wafer integrity