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3818.00.00.30/200mm Production-Grade N-Doped SiC Wafer/Germany

200mm Production-Grade N-Doped SiC Wafer from Germany

Large 200mm nitrogen-doped SiC wafer for high-volume power semiconductor production. HTS 3818.00.00.30 for doped SiC discs in electronics. Enables scaling of EV inverters and solar optimizers.

Duty Rate — Germany → United States

0%

Rate breakdown

9903.05.860%Universal product exemption (U.S. note 52(b))
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Import Tips

• Prime grade (A/B) designation required; production rejects may fall to 2849

• Volume shipments need humidity-controlled bills for wafer integrity