200mm Production-Grade N-Doped SiC Wafer from China
Large 200mm nitrogen-doped SiC wafer for high-volume power semiconductor production. HTS 3818.00.00.30 for doped SiC discs in electronics. Enables scaling of EV inverters and solar optimizers.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Prime grade (A/B) designation required; production rejects may fall to 2849
• Volume shipments need humidity-controlled bills for wafer integrity