3818.00.00.30/200mm Production-Grade N-Doped SiC Wafer/Canada

200mm Production-Grade N-Doped SiC Wafer from Canada

Large 200mm nitrogen-doped SiC wafer for high-volume power semiconductor production. HTS 3818.00.00.30 for doped SiC discs in electronics. Enables scaling of EV inverters and solar optimizers.

Duty Rate — Canada → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Prime grade (A/B) designation required; production rejects may fall to 2849

• Volume shipments need humidity-controlled bills for wafer integrity

200mm Production-Grade N-Doped SiC Wafer from Canada — Import Duty Rate | HTS 3818.00.00.30