100mm Aluminum-Doped SiC Wafer for Sensors from Japan
100mm P-type silicon carbide wafer doped with aluminum, used in harsh-environment sensors and MEMS devices. HTS 3818.00.00.30 applies as doped compound wafer for electronics. Excellent for automotive and aerospace sensing applications.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Include Hall effect mobility data for P-type verification
• Label 'not for human implantation' if medical-adjacent to avoid FDA overlap
• Batch traceability certs essential for sensor fab recall compliance