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3818.00.00.30/100mm Aluminum-Doped SiC Wafer for Sensors/China

100mm Aluminum-Doped SiC Wafer for Sensors from China

100mm P-type silicon carbide wafer doped with aluminum, used in harsh-environment sensors and MEMS devices. HTS 3818.00.00.30 applies as doped compound wafer for electronics. Excellent for automotive and aerospace sensing applications.

Duty Rate — China → United States

50%

Rate breakdown

9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Include Hall effect mobility data for P-type verification

• Label 'not for human implantation' if medical-adjacent to avoid FDA overlap

• Batch traceability certs essential for sensor fab recall compliance

100mm Aluminum-Doped SiC Wafer for Sensors from China — Import Duty Rate | HTS 3818.00.00.30