3818.00.00.20/Phosphorus-Doped Polycrystalline Silicon Wafers/Japan

Phosphorus-Doped Polycrystalline Silicon Wafers from Japan

Wafers made from polycrystalline silicon doped with phosphorus for n-type semiconductor properties, used in thin-film transistors and sensors. They are specifically covered by HTS 3818.00.0020 as doped chemical elements in electronic-grade wafer forms. Doping creates the necessary charge carriers for electronic functionality.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Include resistivity measurements (e.g

• 1-10 ohm-cm) in commercial invoices for accurate valuation

• Register with EPA for TSCA if containing reportable dopants; inspect for wafer bow or warp pre-shipment