Phosphorus-Doped Polycrystalline Silicon Wafers from China
Wafers made from polycrystalline silicon doped with phosphorus for n-type semiconductor properties, used in thin-film transistors and sensors. They are specifically covered by HTS 3818.00.0020 as doped chemical elements in electronic-grade wafer forms. Doping creates the necessary charge carriers for electronic functionality.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Include resistivity measurements (e.g
• 1-10 ohm-cm) in commercial invoices for accurate valuation
• Register with EPA for TSCA if containing reportable dopants; inspect for wafer bow or warp pre-shipment