3818.00.00.20/P-Type Doped Polycrystalline Silicon Wafers 6-inch/China

P-Type Doped Polycrystalline Silicon Wafers 6-inch from China

6-inch diameter polycrystalline silicon wafers with p-type doping for fabrication of MOSFETs and IGBTs in consumer electronics. Classified in HTS 3818.00.0020 for their role as doped silicon elements in wafer form for electronic use. Doping ensures reliable semiconductor performance.

Duty Rate — China → United States

50%

Rate breakdown

9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter

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Import Tips

• Provide SEMI standards compliance (e.g

• M1 spec) for quality assurance during import

• Avoid bulk packing; use cassette trays to minimize breakage claims

• Document non-COF status (not chip-on-film) to stay in correct heading