Arsenic-Doped Polycrystalline Silicon Wafers from China
Polycrystalline silicon wafers with arsenic doping for high-mobility n-type applications in RF electronics. Covered by HTS 3818.00.0020 for doped electronic-grade silicon wafers. Arsenic provides superior electron mobility for fast-switching devices.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Provide Safety Data Sheets for arsenic compounds; comply with HAZMAT shipping rules
• Declare low arsenic concentration to avoid chemical weapon convention flags
• Test for dopant uniformity to prevent quality rejections post-import