Trimethylindium Precursor from China
Trimethylindium (TMIn) is a volatile organo-indium compound used in metal-organic chemical vapor deposition (MOCVD) for semiconductor production. Classified under 2931.90.90.52 as an organo-inorganic compound with direct indium-carbon bonds, fitting Chapter 29 definitions excluding sulfonated/halogenated derivatives.
Duty Rate — China → United States
28.7%
Rate breakdown
9903.88.0425%Except as provided in headings 9903.88.33, 9903.88.34, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(g) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(g)
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Ship under UN 3058 as pyrophoric liquid; require specialized hazmat packaging and carrier approvals
• Provide certificates of analysis confirming >99% purity to avoid duty disputes
• Comply with Wassenaar Arrangement export controls for semiconductor precursors