2931.90.90.52/Trimethylgallium Precursor/China

Trimethylgallium Precursor from China

Trimethylgallium (TMGa) is an organogallium precursor for GaAs/GaN semiconductor epitaxy via MOCVD. Classified 2931.90.90.52 as organo-inorganic with Ga-C bonds.

Duty Rate — China → United States

28.7%

Rate breakdown

9903.88.0425%Except as provided in headings 9903.88.33, 9903.88.34, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(g) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(g)

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter

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Import Tips

• UN 3390 pyrophoric; specialized lecture bottle packaging required

• Wassenaar dual-use controls apply; end-user certificates mandatory

• Vapor pressure testing confirms MOCVD grade specifications