Trimethylgallium Precursor from China
Trimethylgallium (TMGa) is an organogallium precursor for GaAs/GaN semiconductor epitaxy via MOCVD. Classified 2931.90.90.52 as organo-inorganic with Ga-C bonds.
Duty Rate — China → United States
137.5%
Rate breakdown
9903.04.6096.3%Except as provided in heading 9903.04.61, patented pharmaceutical articles as provided for in subdivisions (c) and (d) of U.S. note 40 to this subchapter
9903.05.3112.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of China, as provided for in U.S. note 52 to this subchapter
9903.88.0425%Except as provided in headings 9903.88.33, 9903.88.34, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(g) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(g)
Import Tips
• UN 3390 pyrophoric; specialized lecture bottle packaging required
• Wassenaar dual-use controls apply; end-user certificates mandatory
• Vapor pressure testing confirms MOCVD grade specifications