2931.90.90.52/Trimethylgallium Precursor/China

Trimethylgallium Precursor from China

Trimethylgallium (TMGa) is an organogallium precursor for GaAs/GaN semiconductor epitaxy via MOCVD. Classified 2931.90.90.52 as organo-inorganic with Ga-C bonds.

Duty Rate — China → United States

41.2%

Rate breakdown

9903.88.0425%Except as provided in headings 9903.88.33, 9903.88.34, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(g) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(g)

9903.05.3112.5%Section 301 (forced labor) — additional 12.5% ad valorem on products of China

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Import Tips

• UN 3390 pyrophoric; specialized lecture bottle packaging required

• Wassenaar dual-use controls apply; end-user certificates mandatory

• Vapor pressure testing confirms MOCVD grade specifications