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2903.43.10.00/HFC-41 Semiconductor Etchant Gas/Japan

HFC-41 Semiconductor Etchant Gas from Japan

High-purity Fluoromethane (HFC-41) is critical for plasma etching in microchip fabrication, selectively removing silicon layers. It is directly named in HTS 2903.43.10.00 as a halogenated acyclic hydrocarbon derivative. This gas enables precision in nanoscale semiconductor production.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%
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Import Tips

• Semiconductor industry COA with <1ppm impurities required; comply with REACH if from EU

• Avoid delays by pre-notifying customs of specialty gas status

HFC-41 Semiconductor Etchant Gas from Japan — Import Duty Rate | HTS 2903.43.10.00