HFC-41 Semiconductor Etchant Gas from Japan
High-purity Fluoromethane (HFC-41) is critical for plasma etching in microchip fabrication, selectively removing silicon layers. It is directly named in HTS 2903.43.10.00 as a halogenated acyclic hydrocarbon derivative. This gas enables precision in nanoscale semiconductor production.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Semiconductor industry COA with <1ppm impurities required; comply with REACH if from EU
• Avoid delays by pre-notifying customs of specialty gas status