2850.00.10.00/Tungsten Silicide Sputtering Target/Japan

Tungsten Silicide Sputtering Target from Japan

High-purity tungsten silicide sputtering targets deposit thin films for CMOS gates in semiconductors. As unworked silicide of tungsten, classified HTS 2850.00.10.00 before fabrication into wafers. Supplied as disc or rectangular blocks >99.9% pure.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%

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Import Tips

• Measure planarity <10μm to confirm unworked status per chapter note on electronic forms

• ITAR/EAR dual-use declaration if defense-related end-use suspected

• Silicon stoichiometry analysis prevents metal silicide misclassification