Tungsten Silicide Sputtering Target from China
High-purity tungsten silicide sputtering targets deposit thin films for CMOS gates in semiconductors. As unworked silicide of tungsten, classified HTS 2850.00.10.00 before fabrication into wafers. Supplied as disc or rectangular blocks >99.9% pure.
Duty Rate — China → United States
43%
Rate breakdown
9903.05.3112.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of China, as provided for in U.S. note 52 to this subchapter
9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)
Import Tips
• Measure planarity <10μm to confirm unworked status per chapter note on electronic forms
• ITAR/EAR dual-use declaration if defense-related end-use suspected
• Silicon stoichiometry analysis prevents metal silicide misclassification