Titanium Silicide Sputtering Target Material from Mexico
High-purity TiSi2 powder pressed for thin-film deposition in semiconductor manufacturing. Remains classified as titanium silicide under HTS 2850.00.07.00 as the chemical compound form. Used for silicide gate formation.
Duty Rate — Mexico → United States
14.9%
Rate breakdown
9903.05.5510%Except for products described in headings 9903.05.85–9903.05.92 and 9903.05.94, articles the product of Mexico, as provided for in U.S. note 52 to this subchapter
Import Tips
• Target density and bonding method documentation; bonded targets may be parts
• ITAR/EAR screening for semiconductor equipment end-use
• Distinguish powder form from finished targets (potential 8473 parts)