Titanium Silicide Sputtering Target Material from Japan
High-purity TiSi2 powder pressed for thin-film deposition in semiconductor manufacturing. Remains classified as titanium silicide under HTS 2850.00.07.00 as the chemical compound form. Used for silicide gate formation.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Target density and bonding method documentation; bonded targets may be parts
• ITAR/EAR screening for semiconductor equipment end-use
• Distinguish powder form from finished targets (potential 8473 parts)