Titanium Silicide Sputtering Target Material from China
High-purity TiSi2 powder pressed for thin-film deposition in semiconductor manufacturing. Remains classified as titanium silicide under HTS 2850.00.07.00 as the chemical compound form. Used for silicide gate formation.
Duty Rate — China → United States
39.9%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)
Import Tips
• Target density and bonding method documentation; bonded targets may be parts
• ITAR/EAR screening for semiconductor equipment end-use
• Distinguish powder form from finished targets (potential 8473 parts)