Electronic-Grade Germanium Dioxide Sputtering Target Material from China
Ultra-pure GeO2 for use in sputtering targets to deposit germanium oxide films in microelectronics. Classified in HTS 2825.60.00.10 as pure germanium dioxide oxide. Vital for thin-film transistors and solar cells.
Duty Rate — China → United States
28.7%
Rate breakdown
9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Certify electronic-grade purity (>5N); comply with Wassenaar Arrangement for high-tech materials; use proper ESD-safe packaging