Arsenic Trichloride for Organic Synthesis
Arsenic trichloride used in Vilsmeier-Haack formylation reactions for heterocyclic synthesis, classified under HTS 2812.19.00.10 as a nonmetal chloride oxide equivalent. Technical grade suitable for pharmaceutical intermediate production.
Import Duty Rates by Country of Origin
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If converted to arsine oxide intermediates
Nucleic acid derivatives or pharmaceutical intermediates classify in 2934.
If halogenated during synthesis
Further chlorinated organic compounds shift to Chapter 29.
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Import Tips & Compliance
• Include SDS confirming <98% purity for synthesis grade vs. electronic grade
• Verify no List I chemical status under DEA import regulations
• Document downstream pharmaceutical use to avoid pesticide classification
Related Products under HTS 2812.19.00.10
Arsenic Trichloride
Arsenic trichloride (AsCl3) is a colorless oily liquid compound classified under HTS 2812.19.00.10 as a chloride of nonmetals, specifically arsenic trichloride. It is primarily used in chemical synthesis for producing organoarsenic compounds and as a precursor in semiconductor manufacturing.
99.9% Pure Arsenic Trichloride
High-purity arsenic trichloride (99.9% AsCl3) meets stringent specifications for laboratory and microelectronics applications, classified under HTS 2812.19.00.10 as other chlorides of nonmetals. Its anhydrous form prevents hydrolysis during transport.
Anhydrous Arsenic Trichloride
Anhydrous arsenic trichloride is a fuming liquid essential for GaAs semiconductor production via MOCVD processes, specifically classified under HTS 2812.19.00.10. It reacts with metal organics to deposit arsenic-containing thin films.
Electronic Grade Arsenic Trichloride
Electronic-grade arsenic trichloride meets SEMI standards for III-V compound semiconductor doping, classified under HTS 2812.19.00.10 as a chemically defined nonmetal chloride. Ultra-low impurity levels (<1ppm metals) ensure high-purity deposition.