2804.69.50.00/Silicon Carbide Raw Precursor/Japan

Silicon Carbide Raw Precursor from Japan

Elemental silicon lumps serving as precursor for silicon carbide (SiC) abrasive production via Acheson process. Falls under 2804.69.50.00 as nonmetal silicon not pure or semiconductor-grade.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%

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Import Tips

• Include process flow documentation proving use as elemental precursor, not finished carbide

• Test for impurities; levels >1% may require additional chemical analysis declarations

• Avoid packaging mimicking finished goods to prevent set classification issues