Silicon Carbide Raw Precursor from China
Elemental silicon lumps serving as precursor for silicon carbide (SiC) abrasive production via Acheson process. Falls under 2804.69.50.00 as nonmetal silicon not pure or semiconductor-grade.
Duty Rate — China → United States
18%
Rate breakdown
9903.05.3112.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of China, as provided for in U.S. note 52 to this subchapter
Import Tips
• Include process flow documentation proving use as elemental precursor, not finished carbide
• Test for impurities; levels >1% may require additional chemical analysis declarations
• Avoid packaging mimicking finished goods to prevent set classification issues