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2620.60.90.00/Thallium Gallium Arsenide Etch Residue/Japan

Thallium Gallium Arsenide Etch Residue from Japan

Etch residue from semiconductor GaAs wafer processing with thallium dopants, for metal recovery. Industrial residue under HTS 2620.60.90.00.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%
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Import Tips

• ,ITAR check for defense-related GaAs processes

• Nano-scale particles; special filtration declarations