Thallium Gallium Arsenide Etch Residue from Japan
Etch residue from semiconductor GaAs wafer processing with thallium dopants, for metal recovery. Industrial residue under HTS 2620.60.90.00.
Duty Rate — Japan → United States
10%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
Import Tips
• ,ITAR check for defense-related GaAs processes
• Nano-scale particles; special filtration declarations