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2620.60.90.00/Thallium Gallium Arsenide Etch Residue/Japan

Thallium Gallium Arsenide Etch Residue from Japan

Etch residue from semiconductor GaAs wafer processing with thallium dopants, for metal recovery. Industrial residue under HTS 2620.60.90.00.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
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Import Tips

• ,ITAR check for defense-related GaAs processes

• Nano-scale particles; special filtration declarations

Thallium Gallium Arsenide Etch Residue from Japan — Import Duty Rate | HTS 2620.60.90.00