Hynix H5TQ2G43BFR-H9 256Mb Mobile DDR DRAM Chip from Mexico
A low-power 256 megabit mobile DDR DRAM integrated circuit optimized for smartphones and tablets. It qualifies as a dynamic read-write random access memory in the 128-256 megabit range.
Duty Rate — Mexico → Canada
0%
Import Tips
• Declare the mobile-specific design and capacity
• Provide technical documentation to CBSA
• Verify if any wireless or mobile device regulations apply