Gallium Nitride RF Transistor Die from Japan
The gallium nitride RF transistor die consists of unmounted GaN high-electron-mobility transistor (HEMT) dice on 4-inch wafers for 5G base stations and radar systems, featuring 50V breakdown voltage. It is a semiconductor device that is not photosensitive, so it is classified under this tariff item for 'other semiconductor devices'.
Duty Rate — Japan → Canada
0%
Import Tips
• Ensure the transistor die is declared with the correct HS code
• Keep product specifications for customs
• Verify if the goods are subject to any import restrictions