Gallium Nitride Ingot for LED Substrate Manufacturing from Japan
Gallium nitride (GaN) boule grown by hydride vapor phase epitaxy, weighing more than 2.5 grams, supplied in cylindrical ingot form for subsequent wafering in LED substrate manufacturing. This cultured crystal is not an optical element and falls under heading 38.24.
Duty Rate — Japan → Canada
0%
Import Tips
• Provide a certificate of analysis confirming the crystal weight and growth method
• Ensure the ingot is not classified as a semiconductor device
• Confirm with CBSA if the product is intended for use in electronic components