Gallium Arsenide Ingot from Japan
Gallium arsenide (GaAs) single crystal ingot grown by LEC method, weighing over 2.5 grams, for LED and solar cell substrates. This cultured crystal is not an optical element and falls under heading 38.24.
Duty Rate — Japan → Canada
0%
Import Tips
• Provide a certificate of analysis confirming the crystal weight and growth method
• Ensure the ingot is not classified as a semiconductor device
• Consult CBSA for classification rulings